Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Source: Perspectives, science and technologies for novel silicon on insulator devices. Conference titles: Nato Advanced Research Workshop. Unidade: EP
Assunto: SEMICONDUTORES
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NICOLETT, Aparecido Sirley et al. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. 1998, Anais.. Kyiv: National Academy of Sciences of Ukraine, 1998. . Acesso em: 28 maio 2024.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1998). Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. In Perspectives, science and technologies for novel silicon on insulator devices. Kyiv: National Academy of Sciences of Ukraine.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 maio 28 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 maio 28 ]
